kst - 7002 - 002 1 DN500P npn silicon transistor description extremely low collector - to - emitter saturation voltage ( v ce(sat) =0.2v typ. @i c /i b =3a/150ma) suitable for low voltage large current drivers complementary pair with dp500p switching application ord ering information type no. marking package code DN500P n5 ? sot - 223 : monthly code outline dimensions unit : mm s s e e m m i i c c o o n n d d u u c c t t o o r r pin connections 1. base 2. c ollector 3. emitter
kst - 7002 - 002 2 DN500P absolute m aximum r atings (ta=25 c) characteristic symbol ratings unit collector - base voltage v cbo 15 v collector - emitter voltage v ceo 12 v emitter - base voltage v ebo 5 v collector current i c 1 a collector dissipation p c 1.1 w junction temperature t j 150 c storage tempe rature t stg - 55~150 c electrical characteristics (ta=25 c) characteristic symbol test condition min. typ. max. unit collector - base breakdown voltage bv cbo i c =50 m a, i e =0 15 - - v collector - emitter breakdown volta ge bv ceo i c =1ma, i b =0 12 - - v emitter - base breakdown voltage bv ebo i e =50 m a, i c =0 5 - - v collector cut - off current i cbo v cb =15v, i e =0 - - 0.1 m a emitter cut - off current i ebo v eb =4v, i c =0 - - 0.1 m a h fe1 v ce =2v, i c =500ma 160 - 320 - dc current gain h fe2 v ce =2v, i c =3a 40 - - - collector - emitter on voltage v ce(sat1) i c =3a, i b =150ma - - 0.3 v base - emitter on voltage v be(sat) i c =3a, i b =150ma - - 1.2 v transition frequency f t v cb =5v, i c =500ma - 150 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - - 50 pf
kst - 7002 - 002 3 DN500P electrical characteristic curves fig. 4 v ce(sat) - i c fig. 3 h fe - i c fig. 1 pc - ta fig. 2 ic - v be
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